Excellent surface passivation of germanium by a-Si:H/Al<sub>2</sub>O<sub>3</sub> stacks

نویسندگان

چکیده

Surface passivation of germanium is vital for optimal performance Ge based optoelectronic devices especially considering their rapidly increasing surface-to-volume ratios. In this work, we have investigated the surface by a stack consisting thin layer hydrogenated amorphous silicon (a-Si:H) and an aluminum oxide (Al2O3) capping layer. Plasma-enhanced chemical vapor deposition was used to deposit a-Si:H (0–10 nm), while thermal plasma-enhanced atomic (ALD) were employed Al2O3 films (0–22 nm). Transient photoconductance decay measurements revealed recombination velocity as low 2.7 cm s?1 1.8 nm film only ?6 nm. state-of-the-art scheme, ALD process proved superior since it resulted in exceptionally high negative fixed charge density (Qf ? 1013 cm?2), which key factor velocity. Transmission electron microscopy energy x-ray dispersion that SiOx (?1.4 nm) forms between during process, thought be origin density. This regarded highly interesting applications such solar cells, nanolasers, nano-LEDs on p-type Ge.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx depos...

متن کامل

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer dep...

متن کامل

Effect of surface passivation on corrosion of a cobalt-chromium dental alloy: surface morphology and chemical composition studies

Abstract   Background and Aim: Biocompatibility in some respects depends on the corrosion behavior of dental alloys. The purpose of this study was to investigate the effect of surface passivation of a cobalt chromium alloy on corrosion behavior. Materials and methods: In this experimental study, 20 samples of Flexicast dental alloy were prepared according to ADA97 standard and after casting, t...

متن کامل

Passivation of GaAs surface by ultrathin epitaxial GaN layer

Ultrathin gallium nitride passivation layers grown in situ on near-surface InxGa1 xAs=GaAs quantum wells using metalorganic vapour-phase epitaxy (MOVPE) with dimethylhydrazine as nitrogen source are reported. Nitridation of GaAs using DMHy during the post-growth cool-down is also studied. The effect of passivation on the surface recombination rate of quantum well (QW) structures is characterize...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2021

ISSN: ['1089-7550', '0021-8979', '1520-8850']

DOI: https://doi.org/10.1063/5.0064808